Method of forming infrared-sensitive photoconductors of cadmium salt crystallites
US4434222A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 15, 1981 |
| Grant date | Feb 28, 1984 |
| Priority date | — |
| Expiry date | May 15, 2001 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03G5/08
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photoconductor material having high sensitivity to infrared light is provided therefore making it suitable for use in laser printers. The photoconductor of this invention has a dark decay of approximately 40 volts/second, thereby enhancing the use of this invention with infrared laser printers as compared to prior art infrared sensitive photoconductors. The photoconductor of this invention comprises cadmium sulfide (CdS), cadmium selenide (CdSe), cadmium carbonate (CdCO.sub.3) and cadmium oxide (CdO) in a binder, and preferably also includes a small amount of copper dopant. The photoconductor of this invention is prepared by adding ammonia to a suspension of cadmium sulfide/cadmium carbonate in water and then adding hydrogen selenide to this suspended solution. The ammonia provides a means for retaining the selenide in the solution for an increased period, thus allowing the selenide to remain in the solution for a time sufficient to allow the selenide to react with the small amount of cadmium ion in solution at any time, thereby providing a suspension of intimately mixed CdSCdSeCdCO.sub.3 crystallites.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.