Method of pattern formation
US4434224A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 29, 1982 |
| Grant date | Feb 28, 1984 |
| Priority date | — |
| Expiry date | Jan 29, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/302
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method of pattern formation according to this invention, an organic polymer resist material is simultaneously used with an inorganic resist material, i.e., a first desired pattern consisting of the organic polymer resist material layer is formed on a substrate material, then the whole surface thereof is covered with the inorganic resist material layer, a second desired pattern is then formed with the inorganic resist material layer, and then the resulting second desired pattern is transferred to the organic polymer resist material. According to the invention, mask alignment can automatically be effected by detecting reflected light from an alignment mark on the substrate, formation of a relief including large and small patterns is also easily carried out, throughput can also be increased. The method of the invention may be combined with various process steps, so that such combined method is applicable for deep and shallow etching, formation of an interlayer insulation film, and lift-off method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.