Installation for depositing thin layers in the reactive vapor phase
US4434742A · kind A · utility
30Cited by
5References
3Claims
0Family size
Inventors
Key dates
| Filing date | Sep 22, 1982 |
| Grant date | Mar 6, 1984 |
| Priority date | — |
| Expiry date | Sep 22, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3325
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Installation for the deposition of thin layers in the reactive vapor phase by plasma. The installation comprises a coaxial conductor, whose core is hollow and is used for introducing gas into a chamber having a row of openings. The conductor is also used for introducing the high frequency field necessary for exciting the gas. A substrate or sample holder moves beneath the row of openings. Application to the deposition of thin layers with a large surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.