Method of regulating concentration and distribution of oxygen in Czochralski grown silicon
US4436577A · kind A · utility
14Cited by
4References
8Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 9, 1982 |
| Grant date | Mar 13, 1984 |
| Priority date | — |
| Expiry date | Aug 9, 2002 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B15/30
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Oxygen concentration and distribution within silicon crystal rods drawn according to the Czochralski process from silicon melt contained in a silica crucible, are regulated through variation of both the magnitude and relative sense of direction of seed and crucible rotation rates with uniform distribution of the oxygen being accomplished by increasing crucible rotation rate to preselected values as a function of crystal rod growth and melt consumption.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.