Selective etching method of polyimide type resin film
US4436583A · kind A · utility
18Cited by
1References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 30, 1982 |
| Grant date | Mar 13, 1984 |
| Priority date | — |
| Expiry date | Nov 30, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K3/0017
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Disclosed is a selective etching method of a polyimide type resin film which uses an etching mask consisting of a negative type photoresist material prepared by adding a photosensitive reagent to an unsaturated ketone polymer such as polymethylisopropenylketone as the base resin and an etching solution consisting of 20 to 40% by volume of hydrazine hydrate and the balance of a polyamine. The etching method of the present invention can provide the pattern of the polyimide type resin film having high dimensional accuracy by wet etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.