Glass frits containing WO.sub.3 or MoO.sub.3 in RuO.sub.2 -based resistors
US4436829A · kind A · utility
8Cited by
6References
2Claims
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Assignee
Inventor
Key dates
| Filing date | Feb 4, 1982 |
| Grant date | Mar 13, 1984 |
| Priority date | — |
| Expiry date | Feb 4, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01C17/0654
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
This invention is concerned with the fabrication of thick film, RuO.sub.2 -based resistors. More specifically, this invention is directed to the formulation of glass frits for use in such resistors exhibiting temperature coefficient of resistance values of less than 100 ppm. Such glass frits consist essentially, expressed in terms of mole percent on the oxide basis, of about 32-39% PbO, 44-47% B.sub.2 O.sub.3, 14-17% SiO.sub.2, and an effective amount up to 5% of WO.sub.3 or MoO.sub.3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.