Semiconductor device usable at very high frequencies and its production process
US4437077A · kind A · utility
4Cited by
2References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 31, 1981 |
| Grant date | Mar 13, 1984 |
| Priority date | — |
| Expiry date | Jul 31, 2001 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The impedance value of the semiconductor device usable at very high frequencies is preset during manufacture. The device comprises a Gunn or Zener diode coupled to a coaxial line. The central conductor of the line is constituted by a metal wire mandrel or a metal coating deposited on a glass fibre section. The outer cylinderical conductor is a cylindrical metal coating deposited on a ring of dielectric material, such as glass and which surrounds the diode. Application to microstrip, transmitting antenna and radial cavity circuits.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.