Self-igniting thyristor with a plurality of discrete, field controlled zener diodes
US4437107A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 28, 1981 |
| Grant date | Mar 13, 1984 |
| Priority date | — |
| Expiry date | Sep 28, 2001 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/263
Abstract
A self-igniting thyristor has a zener diode integral with the thyristor, which zener diode bridges the central junction of the thyristor and the breakdown voltage of which determines the breakover voltage of the thyristor. The breakdown voltage of the zener diode is determined by the field geometry in that part of the PN junction of the zener diode which is located near the surface of the semiconductor body, where the breakdown is arranged to take place. A conducting screen is arranged over said portion of the PN junction of the zener diode and is separated from the underlying portion of the surface of the semiconductor body by an insulating layer. The thyristor is provided with means for influencing the potential of the screen, which in turn influences the field geometry and thus the breakdown voltage of the zener diode and the breakover voltage of the thyristor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.