Laser annealed dielectric for dual dielectric capacitor
US4437139A · kind A · utility
78Cited by
11References
22Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 17, 1982 |
| Grant date | Mar 13, 1984 |
| Priority date | — |
| Expiry date | Dec 17, 2002 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/435
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A thin film capacitor having a high dielectric constant and low leakage current includes a dual dielectric structure. The dual dielectric comprises a leakage current blocking first dielectric layer and a high dielectric constant second dielectric layer. The high dielectric constant second dielectric layer is formed by laser annealing a ferroelectric forming titanate or zirconate into a ferroelectric. A leakage current blocking first dielectric layer may also serve as an antireflective coating for the titanate or zirconate layer so that better coupling of the laser energy to the titanate or zirconate layer is obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.