Method for sequentially processing a multi-level interconnect circuit in a vacuum chamber
US4437961A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 19, 1982 |
| Grant date | Mar 20, 1984 |
| Priority date | — |
| Expiry date | Aug 19, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/768
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Apparatus and method for sequentially processing multi-level interconnections for microelectronic circuits are disclosed which includes a vacuum system having a vacuum chamber 12 in which wafers 20 are processed on rotating turntables 16 and 18. The vacuum chamber is provided with an RF sputtering system 24 and a DC magnetron sputtering system 28. A gas inlet 34 is provided in the chamber for the introduction of various gases to the vacuum chamber and the creation of various gas plasma during the sputtering steps. The rotating turntables 16, 18 insure that the respective wafers are present under the sputtering guns for an average amount of time such that consistency in sputtering and deposition is achieved. By continuous and sequential processing of the wafers in a common vacuum chamber without removal, the adverse affects of exposure to atmospheric conditions are eliminated providing higher quality circuit contacts and functional device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.