Vapor-phase method for growing mercury cadmium telluride
US4439267A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Sep 29, 1982 |
| Grant date | Mar 27, 1984 |
| Priority date | — |
| Expiry date | Sep 29, 2002 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S117/907
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The growth of mercury cadmium telluride (Hg.sub.(1-x) Cd.sub.x Te) alloys carried out by the pyrolytic decomposition of a mixture of Cd and Te alkyls in an atmosphere of Hg vapor; the ternary alloy is deposited as an epitaxial film on a CdTe single crystal substrate. The substrate is carried on a heated susceptor in a reactor vessel. The susceptor also has a cavity in which mercury is heated (at a temperature different from the substrate temperature) to provide Hg vapor. A mixture of dimethyl cadmium and diethyl tellurium gases flows through the reactor, the gases thermally decompose in the vicinity of the substrate, and combine with the Hg vapor to form Hg.sub.(1-x) Cd.sub.x Te on the substrate. The relative proportions of dimethyl cadmium and diethyl tellurium determine x in the compound.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.