X-Ray source and method of making same
US4439870A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 28, 1981 |
| Grant date | Mar 27, 1984 |
| Priority date | — |
| Expiry date | Dec 28, 2001 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2235/088
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
It has been discovered that the diffusion of hydrogen species into the outside or water-cooled surface of a pure palladium anode included in an X-ray source causes various deleterious effects. To avoid these effects, a limited-depth hydrogen-barrier layer made, for example, of Pd.sub.3 Sn is formed within the anode extending from the outside surface thereof. The inside or target surface and a major extent of the palladium anode remain virtually unaffected during the forming step. The desired palladium emission characteristic of the anode is thereby preserved. In practice, the modified anode remains free of hydrogen and, as a result, exhibits a particularly advantageous long-life property. Such an anode constitutes an important part of a high-power X-ray lithographic system adapted for making VLSI devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.