Semiconductor integrated circuit capacitor

US4441249A · kind A · utility

Assignee

• Bell Telephone Laboratories, Inc. · US

Inventors

• Joshua Alspector · Chantilly, US
• Eliezer Kinsbron · Highland Park, US
• Marek A. Sternheim · Livermore, US

Key dates

• Filing date: May 26, 1982
• Grant date: Apr 10, 1984
• Expiry date: May 26, 2002

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/68

Abstract

Polyoxide capacitors for semiconductor integrated circuits having oxide dielectric films of 500 Angstroms or less are fabricated using in-situ doped polysilicon layers to have electrical field breakdowns of from 6 to 9 MV/cm. The first polysilicon layer is formed by LPCVD using silane and phosphine at a temperature in the range from about 570 degrees C. to 595 degrees C. These capacitors are relatively precisely valued devices used particularly in applications such as filter/codecs. However, they are useful wherever integral capacitors are needed having high dielectric strength polyoxides, including such semiconductor integrated circuit devices as EPROMs and dynamic RAMs.