Method for manufacturing a semiconductor device employing element isolation using insulating materials
US4441941A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Mar 4, 1981 |
| Grant date | Apr 10, 1984 |
| Priority date | — |
| Expiry date | Mar 4, 2001 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/911
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for element isolation utilizing insulating materials on a semiconductor substrate in which an oxidizable material layer of polycrystalline silicon or the like is formed overlying the substrate surface, the oxidizable material layer disposed at the element-isolation-forming regions is oxidized using an oxidation mask, the oxidation mask is removed and, if necesary at least part of the unoxidized oxidizable material below the mask is removed. Predetermined processes such as oxidation and diffusion are performed thereafter to form semiconductor elements such as MOS transistors and bipolar transistors with high packaging density and reliability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.