Material for semiconductor holder in electron beam writing apparatus
US4442067A · kind A · utility
2Cited by
3References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 14, 1982 |
| Grant date | Apr 10, 1984 |
| Priority date | — |
| Expiry date | Dec 14, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/30
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Material for semiconductor holder in electron beam writing apparatus is disclosed. The material consists of 1.0-11.0% by weight of iron, 0.2-5.5% by weight of Manganese, 0.0001-1.0% by weight of at least one rare earth element selected from rare earth elements, and remainder of chromium and inevitable impurity, the material having magnetic susceptibility of not more than 5.times.10.sup.-5 emu/G and a thermal expansion coefficient of 0-4.0.times.10.sup.-6 /.degree. C. at a temperature of 0.degree. C.-40.degree. C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.