SOS Substrate for semiconductor device
US4442178A · kind A · utility
12Cited by
1References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 24, 1982 |
| Grant date | Apr 10, 1984 |
| Priority date | — |
| Expiry date | Sep 24, 2002 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S117/902
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention provides an SOS substrate for a semiconductor device wherein an epitaxial silicon layer which has an index of plane (100) is formed on a single crystal sapphire plate which has an index of plane (1012). An orientation flat is formed at an incline angle of 2.1 to 2.2.degree. with respect to a [011] or [011] direction on the surface of the epitaxial silicon layer which has the index of plane (100). The direction of the orientation flat on the surface of the sapphire plate is aligned with the direction of a cleavage plane of the sapphire plate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.