Sensitized epitaxial infrared detector
US4442446A · kind A · utility
5Cited by
14References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 17, 1982 |
| Grant date | Apr 10, 1984 |
| Priority date | — |
| Expiry date | Mar 17, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/127
Abstract
An infrared sensitive photodiode which is made of an epitaxial layer of a miconductor alloy which is a lead chalcogenide, a lead-tin chalcogenide, or a lead-cadmium chalcogenide grown on a single crystal substrate of an infrared transparent, electrically insulating material, an Ohmic contact deposited on the epitaxial layer, and a non-Ohmic Pb metal contact deposited on the epitaxial layer to form a Schottky barrier, the improvement comprising the inclusion of halide ions in the interface region between the non-Ohmic lead metal contact and the epitaxial layer of semiconductor material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.