Binary germanium-silicon interconnect and electrode structure for integrated circuits
US4442449A · kind A · utility
28Cited by
5References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 16, 1981 |
| Grant date | Apr 10, 1984 |
| Priority date | — |
| Expiry date | Mar 16, 2001 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12674
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An interconnect structure for use in integrated circuits comprises a germanium-silicon binary alloy. Such an alloy is deposited on the semiconductor wafer from the co-deposition of germanium and silicon using chemical vapor deposition techniques of a type commonly used in the semiconductor industry. The resulting alloy can be oxidized, selectively removed and doped with selected impurities to provide a conductive lead pattern of a desired shape on the surface of a wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.