High resolution AC silicon MOS-light-valve substrate
US4443064A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 10, 1980 |
| Grant date | Apr 17, 1984 |
| Priority date | — |
| Expiry date | Dec 10, 2000 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/136277
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
There is disclosed a single crystal silicon charge storage apparatus suitable for use in an alternating current driven liquid crystal light valve having therein a moderately doped microchannel stop grid. The charge storage medium is made of a high resistivity substrate on which an MOS capacitor is formed having fast photoelectric transient response and capable of operating over a wide frequency range. A doped microgrid structure is formed in one side of the substrate to prevent charge carrier spreading at the silicon-silicon dioxide interface and to provide a focusing electric field for the charge carriers. The signal from the substrate is electrically coupled through high-reflectivity mirrors and light blocking layers to the liquid crystal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.