Method for the formation of phosphorous-nitrogen based glasses useful for the passivation of III-V semiconductor materials
US4443489A · kind A · utility
6Cited by
8References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 10, 1983 |
| Grant date | Apr 17, 1984 |
| Priority date | — |
| Expiry date | May 10, 2003 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/958
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for the chemical vapor deposition of amorphous, glass-like, phosphorous-nitrogen based films on the surface of a substrate is disclosed. The process entails exposing the substrate to a reactant gas stream comprising phosphorous, nitrogen and hydrogen. This method is particularly suited for passivating Group III-V semiconductor materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.