Photoconductive member having an amorphous silicon photoconductor and a double-layer barrier layer
US4443529A · kind A · utility
20Cited by
5References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 14, 1982 |
| Grant date | Apr 17, 1984 |
| Priority date | — |
| Expiry date | Apr 14, 2002 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photoconductive member comprising a support for photoconductive member, a photoconductive layer constituted of an amorphous material comprising silicon atom as a matrix and a barrier layer between said support and said photoconductive layer, said barrier layer having a double-layer structure of a first barrier layer constituted of an amorphous material comprising silicon atom as a matrix and containing impurities which control the property of conductivity and a second barrier layer constituted of an electrically insulating material different from said amorphous material constituting said first barrier layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.