High-breakdown-voltage semiconductor device
US4443812A · kind A · utility
2Cited by
2References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 4, 1981 |
| Grant date | Apr 17, 1984 |
| Priority date | — |
| Expiry date | Feb 4, 2001 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/913
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A high-breakdown-voltage semiconductor device wherein a resistor body made of a P-type impurity region is disposed in a surface region of an N-type semiconductor body so as to form a resistor element, a P-type low doped region is disposed around the resistor body, and a plate layer which extends from a high potential electrode of the resistor body covers a main part of the P-type low doped region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.