Conductivity WSi.sub.2 films by Pt preanneal layering
US4445134A · kind A · utility
16Cited by
3References
4Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 4, 1981 |
| Grant date | Apr 24, 1984 |
| Priority date | — |
| Expiry date | Nov 4, 2001 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/668
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A highly conductive layer utilizing a layer of Pt in conjunction with sputter deposited or co-evaporated WSi.sub.2 to enhance the conductivity increase of the WSi.sub.2 layer occuring during annealing. The Pt layer is deposited as a thin layer directly on top or beneath the WSi.sub.2 layer or may be incorporated within the WSi.sub.2 layer. During annealing platinum atoms diffuse into the WSi.sub.2 film resulting in lower resistivity values than in comparably deposited annealed film wherein the Pt layer has been omitted.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.