Temperature sensing device
US4448549A · kind A · utility
29Cited by
2References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 9, 1982 |
| Grant date | May 15, 1984 |
| Priority date | — |
| Expiry date | Feb 9, 2002 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01K7/01
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A temperature sensing device is disclosed which utilizes a temperature sensing circuit which generates a voltage whose level varies linearly in accordance with temperature, this voltage being produced using a pair of MOS field effect transistors which have different values of the ratio Id/K, where Id is drain current and K is the channel pattern ratio of channel width to channel length.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.