Chemical etching of transformed structures
US4450041A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jun 21, 1982 |
| Grant date | May 22, 1984 |
| Priority date | — |
| Expiry date | Jun 21, 2002 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/924
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A maskless technique is disclosed for shaping semiconductor materials by ming areas that are selectively etchable with respect to the rest of the structure. In one embodiment of this invention, a body of amorphous material is subjected to radiation by a focused energy beam so as to convert a predetermined region of the amorphous material into a region of crystalline material. The converted region etches at a slower rate than the non-converted amorphous material. In a second embodiment of the present invention, a method of selectively etching a metal is disclosed which includes the step of subjecting a predetermined region of the metal to be impinged upon by a shaped ion beam so as to ion implant the predetermined region. A chemical etch is applied to the metal and to the ion implanted region of the metal and the ion implanted region etches at a slower rate than the portion of the metal outside the ion implanted region. In another embodiment of the present invention, a method of selectively etching a dielectric is disclosed which includes the step of subjecting a predetermined region of the dielectric to be impinged upon by a shaped ion beam so as to ion implant the predetermined re…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.