Multiple-quantum-layer photodetector
US4450463A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jun 29, 1981 |
| Grant date | May 22, 1984 |
| Priority date | — |
| Expiry date | Jun 29, 2001 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/146
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Disclosed is a multiple-quantum-layer detector for responding to photons having a predetermined amount of energy. The detector includes a purality of parallel layers of a first semiconducting material having a first conduction band energy level, with a plurality of layers of a second semiconducting material parallel to the first layers and having a second conduction band energy level differing from the first conduction band energy level by no more than the predetermined energy. The second layers alternate with the first to establish a plurality of parallel heterojunctions. First and second electrodes are provided for applying an electric potential across the alternating layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.