Process for obtaining a homogeneous planar magnetization layer in a ferrimagnetic garnet
US4451500A · kind A · utility
11Cited by
0References
10Claims
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Assignee
Inventors
Key dates
| Filing date | Sep 13, 1982 |
| Grant date | May 29, 1984 |
| Priority date | — |
| Expiry date | Sep 13, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F41/14
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The invention relates to a process making it possible to obtain at least one homogeneous planar magnetization layer in a material constituted by a ferrimagnetic garnet film epitaxied on an amagnetic substrate. According to this process, at least one implantation of ions, with the exception of ions of gaseous elements and those of metallic elements occurring in the composition of the solvent is performed in the film at a high dose. The film and substrate are annealed in order to recrystallize in monocrystalline form that part of the film made amorphous by implantation. Application to the production of magnetic bubble memories.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.