High hydrogen amorphous silicon
US4451538A · kind A · utility
5Cited by
0References
14Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 13, 1983 |
| Grant date | May 29, 1984 |
| Priority date | — |
| Expiry date | May 13, 2003 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31663
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Amorphous silicon having a high band gap is formed by glow discharge in an atmosphere containing H.sub.2 and SiH.sub.4 in a ratio of at least approximately 9 to 1. The partial pressure of H.sub.2 and SiH.sub.4 is preferably no more than 1 torr, and the power density of the discharge is preferably no more than 0.08 watts per square centimeter. In the intrinsic form, the material of the present invention has a band gap of approximately 1.95 electron volts (eV). Similar p-type material, formed by adding B.sub.2 H.sub.6 to the gas atmosphere at approximately 500 parts per million (ppm), has a band gap as high as 1.90 eV.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.