Photosensitive member
US4451546A · kind A · utility
31Cited by
7References
4Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Mar 7, 1983 |
| Grant date | May 29, 1984 |
| Priority date | — |
| Expiry date | Mar 7, 2003 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03G5/08
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The invention disclosed relates to a photosensitive member having excellent photosensitivity characteristics in the visible light region as well as in the near infrared region. The photosensitive member according to the invention comprises an electrically-conductive substrate, an amorphous silicon semiconductor layer, an amorphous silicon-germanium photoconductive layer formed on the semiconductor layer, and an amorphous silicon photoconductive layer formed the amorphous silicon-germanium photoconductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.