Semiconductor gas sensor
US4453151A · kind A · utility
Inventors
Key dates
| Filing date | Jun 7, 1982 |
| Grant date | Jun 5, 1984 |
| Priority date | — |
| Expiry date | Jun 7, 2002 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T436/184
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A semiconductor gas sensor for use in equipment for detecting small amounts of H.sub.2 S. The method of sensor fabrication comprises spray deposition of a mixture of metal oxides mixed together with various metal and non-metal materials which serve in the finished product as activators, dopants, and/or film binder materials, and including in suspension a molecular sieve material, for enhancing and defining porosity on a scale of molecular dimensions in the finished sensor. All of the foregoing materials are suspended in a suitable solution and preferably sprayed onto a heated insulating substrate to form the finished product. The example sensor, capable of selective detection of H.sub.2 S in air and a sensitivity of less than 1 PPM (part per million), is comprised of a platinum activated alumina, tin oxide, and zeolite molecular sieve material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.