Low cost thin film capacitor
US4453199A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 17, 1983 |
| Grant date | Jun 5, 1984 |
| Priority date | — |
| Expiry date | Jun 17, 2003 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/435
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a low cost method of fabricating capacitors within tight tolerance ranges. The method involves forming, by vapor deposition or the like, discrete electrode areas on an insulating substrate, and depositing a dielectric layer over the substrate and the areas between the electrodes. A further series of electrode are formed over the dielectric in partial registry with the first mentioned electrodes, and the substrate is thereafter diced to expose opposed edge portions of the resultant capacitors. The capacitors are terminated preferably by a sputtering technique, the sputtered material being insulated from contact with the edge portions of non-exposed electrodes by the deposited dielectric.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.