Nonvolatile semiconductor memory device
US4453234A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Sep 16, 1981 |
| Grant date | Jun 5, 1984 |
| Priority date | — |
| Expiry date | Sep 16, 2001 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/683
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile semiconductor memory device having floating gate type field effect transistors with floating gate electrodes. In the memory device, a source region, an active region and a drain region are formed in a first semiconductor region. A second semiconductor region is formed so as to electrically be insulated from the first semiconductor region. A floating gate electrode is formed on the first and second semiconductor regions with an insulating film interposed therebetween, respectively. The floating gate electrode faces the second semiconductor region with the insulating film interposed therebetween so that charge may be transferred between the floating gate electrode and second semiconductor region in order to control an amount of charge in the floating gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.