Process for forming resist patterns using mixed ketone developers
US4454222A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 13, 1982 |
| Grant date | Jun 12, 1984 |
| Priority date | — |
| Expiry date | Apr 13, 2002 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/325
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Disclosed is a process for forming resist patterns by coating on a substrate at least one selected from homopolymers of a monomer represented by the formula: ##STR1## and copolymers of said monomer with other vinyl monomers, applying radiation to a desired portion thereof, and thereafter carrying out development treatment with use of a developer, which is characterized in that said developer is composed of one or more of ketones selected from the group consisting of 2-butanone, 2-methyl-3-butanone, 2-pentanone, 3-pentanone and 4-methyl-2-pentanone; or mixture thereof with other ketone and/or alcohol, except for a single use of 2-butanone and a combination of 4-methyl-2-pentanone and alcohol.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.