Process for producing the field oxide of an integrated circuit
US4455193A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 1983 |
| Grant date | Jun 19, 1984 |
| Priority date | — |
| Expiry date | Jun 29, 2003 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/978
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Process for producing the field oxide of an integrated circuit, wherein it comprises the following successive stages: PA0 (a) producing a resin mask on a first region of a doped semiconductor substrate, in which will be formed the active component of the integrated circuit, PA0 (b) production of a first etching over a height h of a second region of the doped semiconductor substrate, in which it is wished to produce the field oxide, PA0 (c) implantation of ions in the second region of the remaining substrate, giving a doping of the same type as that of the substrate, PA0 (d) deposition of an insulating layer on the complete substrate, PA0 (e) deposition of a resin layer on the insulating layer, PA0 (f) production of a second simultaneous etching of the resin layer and the insulating layer, until the complete elimination of that region of the oxide layer positioned above the first region of the substrate in which will be produced the active component of the integrated circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.