Method of manufacturing bodies of silicon nitride
US4455275A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 10, 1980 |
| Grant date | Jun 19, 1984 |
| Priority date | — |
| Expiry date | Oct 10, 2000 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B35/593
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Bodies of silicon nitride are produced by enclosing a silicon nitride powder in a gas-tight glass casing and subjecting the casing to isostatic pressure using gas as a pressure medium at a temperature of at least 1600.degree. C. and a pressure of at least 100 MPa. The casing is a glass having a high softening point. The casing is evacuated and sealed before compressing. The product may be pre-formed by isostatic compacting at a pressure of at least 100 MPa at a temperature considerably below the sintering temperature. The casing is cooled at a rate of at most 1000.degree. C. per hour and at a pressure of not over 10 MPa.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.