Double crucible Czochralski crystal growth method
US4456499A · kind A · utility
8Cited by
9References
5Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 22, 1982 |
| Grant date | Jun 26, 1984 |
| Priority date | — |
| Expiry date | Jul 22, 2002 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B15/12
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An apparatus useful for double crucible Czochralski crystal growth comprises an inner crucible fixed within an outer crucible wherein the inner crucible contains an extra volume or reservoir of semiconductor melt when flow of semiconductor melt from the outer crucible into the inner crucible through means interconnecting the crucibles ceases.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.