Enhanced adhesion by high energy bombardment
US4457972A · kind A · utility
26Cited by
4References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 7, 1981 |
| Grant date | Jul 3, 1984 |
| Priority date | — |
| Expiry date | Dec 7, 2001 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31699
- WIPO fieldOther special machines
- WIPO sectorMechanical engineering
Abstract
Films (12) of gold, copper, silicon nitride, or other materials are firmly bonded to insulator substrates (12) such as silica, a ferrite, or Teflon (polytetrafluorethylene) by irradiating the interface with high energy ions. Apparently, track forming processes in the electronic stopping region cause intermixing in a thin surface layer resulting in improved adhesion without excessive doping. Thick layers can be bonded by depositing or doping the interfacial surfaces with fissionable elements or alpha emitters.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.