Amorphous semiconductor method
US4459163A · kind A · utility
30Cited by
3References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 5, 1982 |
| Grant date | Jul 10, 1984 |
| Priority date | — |
| Expiry date | Mar 5, 2002 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/147
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Preparation of amorphous semiconductor material that is suitable for use in a wide variety of devices by the pyrolytic decomposition of one or more gaseous phase polysemiconductanes, including polysilanes and polygermanes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.