Method of deposition of silicon carbide layers on substrates and product
US4459338A · kind A · utility
14Cited by
3References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 19, 1982 |
| Grant date | Jul 10, 1984 |
| Priority date | — |
| Expiry date | Mar 19, 2002 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/2993
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for direct chemical vapor deposition of silicon carbide to substrates, especially nuclear waste particles, is provided by the thermal decomposition of methylsilane at about 800.degree. C. to 1050.degree. C. when the substrates have been confined within a suitable coating environment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.