Method of making magnetic bubble memory device by implanting hydrogen ions and annealing
US4460412A · kind A · utility
7Cited by
4References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 12, 1982 |
| Grant date | Jul 17, 1984 |
| Priority date | — |
| Expiry date | Apr 12, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F41/34
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of implanting a magnetic garnet film with ions is disclosed in which a covering film is provided on a monocrystalline magnetic garnet film for magnetic bubbles, and hydrogen ions are implanted in a desired portion of a surface region in the magnetic garnet film through the covering film. According to this method, it is possible to form an ion-implanted layer in which the ion concentration distribution in the direction of depth is uniform, and moreover the inplane anisotropy field in the ion-implanted layer decreases only a little with time in an annealing process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.