Photoconductive member with .alpha.-Si and C, U or D and dopant
US4460669A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 22, 1982 |
| Grant date | Jul 17, 1984 |
| Priority date | — |
| Expiry date | Nov 22, 2002 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03G5/08242
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photoconductive member comprises a support for a photoconductive member and an amorphous layer having photoconductivity constituted of an amorphous material comprising silicon atoms as a matrix, said amorphous layer having a first layer region containing as the constituent atom at least one kind of atoms selected from the group consisting of oxygen atoms, carbon atoms and nitrogen atoms in a distribution state which is ununiform and continuous in the direction of layer thickness and a second layer region containing atoms belonging to the group III of the periodic table as constituent atoms in a distribution state which is ununiform and continuous in the direction of layer thickness, said first layer region existing internally below the surface of said amorphous layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.