Patent · US Expired

Plasma reactor for etching and coating substrates

US4461237A · kind A · utility

12Cited by

4References

18Claims

0Family size

Assignee

International Business Machines Corporation · US

Inventors

Holger Hinkel · Böblingen, DE
Gerhard Kaus · Metzingen, DE
Georg Kraus · Konz, DE
Ulrich Kunzel · San Jose, US
Reinhold Muehl · Altdorf, DE

Key dates

Filing date	Mar 17, 1983
Grant date	Jul 24, 1984
Priority date	—
Expiry date	Mar 17, 2003

Classification

Technology area (CPC H)Electricity
CPC primaryH01J37/32541
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

A plasma reactor comprises a reaction chamber having two plate-shaped electrodes arranged parallel to and above each other, whereby the substrates are supported on the lower electrode and this electrode is additionally provided with a center opening (5) through which gas is fed into the electrode space or which is evacuated from it, and where (a) the upper electrode is connected to a high frequency AC or RF voltage and (b) which has no electrode material in the regions opposite the substrates and (c) where their position and shape are determined by the substrates on the lower electrode, causing the electric field in the electrode space to be selectively weakened at at least above the substrates.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.