Patent · US Expired

Voltage sense circuit for a bubble memory voltage booster

US4461989A · kind A · utility

9Cited by
4References
13Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 27, 1982
Grant dateJul 24, 1984
Priority date
Expiry dateAug 27, 2002

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C5/145
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

In a voltage boost circuit for use in conjunction with a bubble memory operational driver, an output transistor alternately turns on and off so as to permit current to flow through an inductor which, when terminated by turning off the output transistor, causes a high voltage to be built up across the inductor which causes charge to be transferred to and stored in a capacitor. The output transistor is not turned on again until the voltage across the inductor falls below a predetermined value. A current mirror circuit is coupled to the comparator input and includes a buffer transistor which, when the voltage at the comparator input exceeds the break-down voltage of the buffer transistor, acts as a BV.sub.ceo level shifter.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.