Method of forming a multilayer thin film
US4462881A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 18, 1981 |
| Grant date | Jul 31, 1984 |
| Priority date | — |
| Expiry date | Nov 18, 2001 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F41/34
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of forming a multilayer thin film is disclosed in which a second thin conductive film is deposited on a first thin conductive film uninterruptedly after the first thin film has been deposited on a substrate, the first and second films thus formed are processed so as to form a predetermined pattern, the surface of the second thin film is cleaned by ion etching and a third thin conductive film is deposited on the whole surface of the substrate, and then the second and third thin films are processed so as to have a pattern different from the above-mentioned predetermined pattern. In the case where two thin conductive films different in material and pattern from each other are piled on a substrate, the above method can form a perfect interconnection between the two films and can make very small the contact resistance between the two films. Accordingly, the method is fit to form, for example, a barber pole type magnetoresistive element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.