Patent · US Expired

Electron beam proximity effect correction by reverse field pattern exposure

US4463265A · kind A · utility

50Cited by
3References
8Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 17, 1982
Grant dateJul 31, 1984
Priority date—
Expiry dateJun 17, 2002

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J2237/31771
  • WIPO fieldMicro-structural and nano-technology
  • WIPO sectorChemistry

Abstract

In electron beam lithography, a beam of incident electrons exposes a preselected circuit pattern in a thin resist layer deposited on top of a substrate to be etched. Some of the electrons scatter from the substrate back into the resist layer producing an undesired exposure which produces variable resolution of features. In accordance with the disclosed technique, the region of the resist which is complementary to the desired circuit pattern is also exposed by an electron beam which has been adjusted to produce an exposure approximating that due to backscattering. This additional exposure removes the spatial variability in resolution attainable by the electron beam lithography.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.