Doped photoconductive film comprising selenium and tellurium
US4463279A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | May 21, 1982 |
| Grant date | Jul 31, 1984 |
| Priority date | — |
| Expiry date | May 21, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J29/456
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A photoconductive film comprising a photo-conductive layer which is mainly made of selenium and a region added with tellurium in a direction of the thickness of the layer, wherein at least either one of a portion in a direction of hole flow of said region added with tellurium and a portion in the hole flow of another region which is located adjacent to said region added with tellurium is doped with at least one member selected from the group consisting of an oxide, a fluoride and elements which belong to the group II, III and VII, which are capable of forming a negative space charge in selenium, at a concentration in a range of 10 ppm to 1% by weight on an average. Typical examples of such oxide, fluoride and element include CuO, In.sub.2 O.sub.3, SeO.sub.2, V.sub.2 O.sub.5, MoO.sub.3, WO.sub.3, GaF.sub.2 InF.sub.3, Zn, Ga, In, Cl, I, Br and the like. The after image characteristic ascribable to incident light of high intensity can be significantly improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.