Power amplifier circuit employing field-effect power transistors
US4463318A · kind A · utility
5Cited by
12References
8Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 30, 1982 |
| Grant date | Jul 31, 1984 |
| Priority date | — |
| Expiry date | Aug 30, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F3/2171
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A class D power amplifier employing two N-channel field-effect power transistors includes an arrangement which develops a biasing voltage for the upper N-channel transistor. The biasing voltage exceeds the magnitude of the power source voltage so that the upper N-channel transistor can exhibit low channel ON resistance whereby substantially the entire supply voltage is applied to a load device. A transistor switch becomes conductive across a resistance which couples biasing voltage to the upper N-channel transistor when the biasing voltage exceeds the supply voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.