Silicon avalanche photodiode with low k.sub.eff

US4463368A · kind A · utility

Assignee

• RCA Corporation · US

Inventors

• Robert J. McIntyre · Rue du Bois des Loges, CA
• Paul P. Webb · Keyano, CA

Key dates

• Filing date: Nov 20, 1981
• Grant date: Jul 31, 1984
• Expiry date: Nov 20, 2001

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F30/225

Abstract

An n-p-.pi.-p.sup.+ Si avalanche photodiode wherein the number of acceptors introduced into a Si body to form the p-type conductivity region has been reduced and this region extends a distance greater than about 35 micrometers into the body from the surface and wherein the n-type conductivity region extends a distance into the body such that the p-n junction is less than about 10 micrometers from the surface of the body. The method of the invention comprises introducing a reduced number of acceptors into the surface of the body, diffusing the acceptors into the body a distance greater than about 35 micrometers and forming an n-type conductivity region such that the p-n junction is less than 10 micrometers from the surface of the device. APDs of the invention exhibit a k.sub.eff of about 0.006 which is a factor of greater than 2.5 less than that of typical prior art devices.