Method for selective area growth by liquid phase epitaxy
US4464211A · kind A · utility
10Cited by
9References
7Claims
0Family size
Assignee
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Key dates
| Filing date | May 26, 1982 |
| Grant date | Aug 7, 1984 |
| Priority date | — |
| Expiry date | May 26, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02636
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A lateral selective area liquid phase epitaxy method useful for the fabrication of, for example, a double barrier buried heterostructure laser, is described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.