Glass frits containing WO.sub.3 or MoO.sub.3 in RuO.sub.2 -based resistors
US4464421A · kind A · utility
2Cited by
7References
4Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 28, 1983 |
| Grant date | Aug 7, 1984 |
| Priority date | — |
| Expiry date | Oct 28, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01C17/0654
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
This invention is concerned with the fabrication of thick film, RuO.sub.2 -based resistors. More specifically, this invention is directed to the formulation of glass frits for use in such resistors exhibiting temperature coefficient of resistance values of less than 100 ppm. Such glass frits consist essentially, expressed in terms of mole percent on the oxide basis, of about 32-39% PbO, 44-47% B.sub.2 O.sub.3, 14-17% SiO.sub.2, and an effective amount up to 5% of WO.sub.3 or MoO.sub.3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.